danial keighobadi

Danial Keighobadi received the M.Sc. degree in Electrical engineering (Micro and Nanoelectronic Devices) from the University of Semnan, Semnan, Iran. His current research interests include modeling and simulation of advanced and novel TUNNEL FET structures

Living in : Iran

Gender : MaleRace : White

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Educations

Electronics EngineeringMaster'sSemnan University2018-05-08 Iran

Supervisor's name :dr.saeid mohammadi, dr.morteza fathipour

Title :

Investigation, evaluation and improvement of Electrostatic potential analytical models in the channel of double gate heterostructure tunneling field effect transistor

Mechatronic EngineeringBachelor'sHakim Sabzevari University (Tarbiat Moallem University Sabzevar)2014-06-25 Iran

Title :

biometrics

English Scores

TOEFL31-Oct-2022

106/120Total

Reading :

28/30

Listening :

29/30

Speaking :

20/30

Writing :

29/30

Journal Publications

Publication Title :

An Analytical Drain Current Model for the Cylindrical Channel Gate-All-Around Heterojunction Tunnel FETsFirst author

Journal :

IEEE Transactions on Electron Devices

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Publication Title :

A universal analytical potential model for double-gate Heterostructure tunnel FETsSecond author

Journal :

IEEE Transactions on Electron Devices

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Publication Title :

Physical and analytical modeling of drain current of double-gate heterostructure tunnel FETsFirst author

Journal :

Semiconductor Science and Technology

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Publication Title :

Switching performance investigation of a gate-all-around core-source InGaAs/InP TFETFirst author

Journal :

Transactions on Electrical and Electronic Materials

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Publication Title :

Recessed gate cylindrical heterostructure TFET, a device with extremely steep subthreshold swingFirst author

Journal :

Transactions on Electrical and Electronic Materials

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Publication Title :

Physical analysis on the DC and RF operations of a novel SOI-MESFET with protruded gate and dual wellsFourth author

Journal :

Silicon

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Publication Title :

Modeling of Drain Current in Double-Gate Heterojunction Tunneling FETs: a Physical-Analytical ApproachFirst author

Journal :

Silicon

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Research Keywords

nanoelectronic

TFET

mesfet

Thin Films and Nanotechnology

semicondoctor

geraphen

tunneling field effect transisotrs

mosfet

Semiconductor Device Physics

Awards

First Rank Student in UniversityMaster

References

saeid mohammadi

sd.mohammadi@gmail.com

mohammad danaie

mdanaie@semnan.ac.ir